In this work we compared AC and DC bias temperature instability (BTI) degradations induced by stressing the channel and Junction-FET regions in 4H polytype n-channel Silicon Carbide (SiC) based power ...

Accelerated neutron tests on Si and SiC power MOSFETs at different temperatures were performed at ChipIr facility (Didcot, UK). The results show a strong correlation between the temperature dependence ...