ROHM has responded to this requirement with the development of an ultra-compact low ON-resistance MOSFET that’s been ...

ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2mΩ (typ.) in a compact 2mm × 2mm package.

Among these switches, we propose a cost-effective hybrid configuration consisting of Si IGBTs and SiC MOSFETs for straightforward commutations during the charging mode of matrix rectifiers. Also, the ...

Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

IGBT and Super Junction MOSFET Market was valued at $11.1 billion in 2021, is projected to reach $33.1 billion by 2031, grow at a CAGR of 11.4% from 2022-2031. The industrial robotics and electric ...

In this article, a novel SiC trench MOSFET with integrated Schottky super barrier rectifier (SSBR-TMOS) is proposed and studied by TCAD simulations. The SSBR is introduced as a replacement of the body ...