Quantum confinement in 3-D device structure together with the newly employed materials like silicon-germanium (SiGe) in advanced technologies (e.g., FinFET, nanowire, nanosheets, etc.) makes ...

This paper discusses the FEOL reliability of both substrate isolated and non-isolated 2 nm generation Gate-AllAround (GAA) Nanosheet (NS) Transistors. We demonstrate comparable degradation and similar ...