Discover how Penn State’s 2D CMOS computer breakthrough paves the way for ultra-efficient, atomic-scale electronics beyond silicon.

For instance, the 30-V MOSFET can manage more than 10 A of current at a PWM width of 1 ms when the drain to source voltage (V DS) of the power device is 12 V.

Kaustav Banerjee Kaustav Banerjee is one of the world’s leading innovators in the field of nanoelectronics. His current research focuses on the physics, technology, and applications of two-dimensional ...

Series resistance within the metal-oxide-semiconductor field-effect transistor erodes some of the performance improvement inherent to channel length reduction. The subject of series resistance, then, ...

Driving a high-side (HS) p-channel MOSFET without an additional voltage source or a charge pump is uncomplicated, resulting in significantly simplified designs, space savings, reduced part count, and ...

In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. The integrated device exhibits excellent ...

Above – MOSFETs based on phosphorous doped n-type diamond and the electrical characteristics with temperatures up to 573 K. A) Schematic of the MOSFETs. The n+ diamond layer is used to reduce the ...

Diodes Incorporated has introduced its first automotive-compliant, dual-channel, high-side power switches—the ZXMS82090S14PQ, ZXMS82120S14PQ, and ZXMS82180S14PQ—as an expansion of its IntelliFET ...

Toshiba Electronics Europe GmbH has released a new 100V N-channel power MOSFET based upon its latest generation U-MOSX-H process. The new device is ideal for challenging applications, including ...

If you ever work with a circuit that controls a decent amount of current, you will often encounter a FET – a Field-Effect Transistor. Whether you want to control a couple of pow ...