As transistor gate lengths are scaled towards the 10-nm range, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot ...

In this letter, low frequency noise (LFN) of elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is systematically investigated for the first time. EMMO TFT possesses distinctive LFN ...

Three conjugated pigment molecules with fused hydrogen bonds, 3,7-diphenylpyrrolo [2,3- f]indole-2,6 (1 H,5 H)-dione (BDP), (E)-6,6′-dibromo- [3,3′-biindolinylidene]-2,2′-dione (IIDG), and 3,6-di ...

Novel enhancement-mode organic electrochemical transistors (OECTs) have been prepared by poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) de-doped polyethylenimine on the multi-walled carbon ...

In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...