A nanowire transistor with full CMOS functionality has been fabricated without the use of junctions or doping concentration gradients. Nature Nanotechnology ...

These gates consist of a vertical cylinder, at the center of which lies the nanowire. They are much better at controlling the transistor current than traditional planar gates. Li and co-workers ...

Each transistor comprises a bundle of approximately 1500 nanowires, with each nanowire measuring about 500 nm in diameter. The sensors could detect pressure changes as small as 10 KPa – similar to a ...

A finished device: Optical microscope image of the transistor (left) and an ultra-scaled vertical nanowire (right). (Courtesy: Y Shao) A new transistor made from semiconducting vertical nanowires of ...

MIT’s vertical nanowire transistors, with diameters as small as six nanometers, harness this effect to achieve unprecedented performance. The precise engineering required for such devices ...

A new approach to integrated circuits, combining atoms of semiconductor materials into nanowires and structures on top of silicon surfaces, shows promise for a new generation of fast, robust ...

Nanowire-based transistors also have many advantages for 3D transistor designs; however, their small size typically cannot handle enough current for efficient function.

In the race to scale transistors down to the smallest possible size, the relevant research attracts a lot of money and hype. Unfortunately, the hype often obscures the real nature of any ...

Nanowire transistors made from silicon and germanium have been found to outperform conventional silicon ones. As transistors are the crucial switches used to control electronic circuitry this ...

Researchers agree that chip manufacturers will soon reach a hard limit in terms of transistor miniaturization, disproving rule-of-thumb predictions that transistor density roughly doubles every 18 ...