A single-side processed dual-cantilever high-shock accelerometer in (111) silicon wafers is proposed in this paper. The device is formed by using advanced silicon surface and bulk micromachining ...

Catalyst-free, direct heteroepitaxial growth of vertical InAs nanowires on Si(111) substrates was accomplished over a large area by metal−organic chemical vapor deposition. Nanowires showed very ...

We demonstrate for the first time a high-power P-i-N diode with local lifetime control using the proximity gettering of platinum in the FZ silicon. The region of maximal damage resulting from the ...