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The TA1165 is a Class AB gallium nitride (GaN)-based amplifier delivering up to 20 W of RF output power across the 5.5 GHz to ...
A novel impedance-transforming balun technique has been applied to the design of a push-pull GaAs FET power amplifier for the first time. By employing a multilayer structure which gives very tight ...
The performance of a 1kW push-pull device using state of the art silicon die technology is described. Operating under pulsed RF conditions of 300 mus pulse width, 10% duty cycle, it can deliver 1kW ...
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