AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have ...

At the very least, the transistor could revolutionize communications and radio signals, something that would give the US Army an advantage if the invention was kept a secret from other countries.

In this letter, low frequency noise (LFN) of elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is systematically investigated for the first time. EMMO TFT possesses distinctive LFN ...

We investigate the operation modes of a dual-gate reconfigurable field-effect transistor (RFET). To this end, dual-gate silicon-nanowire FETs are fabricated based on anisotropic wet etching of silicon ...

Research hub Imec has achieved what it claims is a record-breaking achievement in RF gallium nitride on silicon (GaN-on-Si) transistor performance that could be a boon for next-generation 6G ...

Mumbai's CAAR classifies Insulated Gate Bipolar Transistors (IGBTs) under CTH 8541.29.00, citing HSN notes. The ruling impacts EV component importers.

Tuberculosis (TB) is still threatening millions of people’s lives, especially in developing countries. One of the major factors contributing to the ongoing epidemic of TB is the lack of a fast, ...

Novel enhancement-mode organic electrochemical transistors (OECTs) have been prepared by poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) de-doped polyethylenimine on the multi-walled carbon ...