An ultrathin body and buried oxide (UTBB) SOI MOSFETs with novel non-LDD source/drain extensions are proposed, where highly conductive paths are induced by positive charges locally distributed in the ...

This article reports on the impact of back gate bias on the transport properties and performance of 22 nm fully depleted silicon-on-insulator (FD-SOI) MOSFETs. FD-SOI MOSFETs were analyzed as a ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...