An ultrathin body and buried oxide (UTBB) SOI MOSFETs with novel non-LDD source/drain extensions are proposed, where highly conductive paths are induced by positive charges locally distributed in the ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

ABSTRACT: Based on the binary MOSFET and FinFET field-effect transistors, we have respectively designed ternary 0, +1, −1 digital signals using the improved MOSFET and FinFET field-effect transistors.

Planar CMOS MOSFETs were initially dominant (through ~28nm), then came SOI MOSFETs (28nm to 16nm), then FinFETs (16nm to 5nm), and now finally Gate-All-Around FETs (GAAFETs, 3nm and beyond).

SOI MOSFET 1 Articles New Bismuth Transistor Runs 40% Faster And Uses 10% Less Power May 16, 2025 by John Elliot V 38 Comments ...

Infineon’s 750-V CoolSiC G2 MOSFETs enhance system efficiency and power density in automotive and industrial power conversion. The second-generation G2 technology provides typical on-resistance values ...

Wolfspeed specifically designed its latest generation of SiC MOSFETs to be a better fit for both hard- and soft-switching power systems.

They are FD-SoI (fully-depleted silicon-on-insulator) mosfets, designed particularly for sub-1K operation by SemiQon, and made on 150mm SOI wafers. Charge carriers are extended from doped contact ...

This paper presents an improved body tie structure for partially depleted silicon-on-insulator (SOI) MOSFETs. Inspired by tunneling current of degenerated p-n-junction at low forward bias, a tunnel ...

The hybrid power inverter proposed by STMicroelectronics integrates SiC MOSFETs and IGBTs to boost power efficiency for less.