SOI MOSFET 1 Articles New Bismuth Transistor Runs 40% Faster And Uses 10% Less Power May 16, 2025 by John Elliot V 38 Comments ...

Planar CMOS MOSFETs were initially dominant (through ~28nm), then came SOI MOSFETs (28nm to 16nm), then FinFETs (16nm to 5nm), and now finally Gate-All-Around FETs (GAAFETs, 3nm and beyond).

Non-classical MOSFETs, including devices with enhanced mobility channels (i.e., strained silicon channels) as well as ultra-thin body silicon-on-insulator (SOI) single-gate MOSFETs and various types ...

However, as devices become increasingly scaled down, noise emerges as a crucial factor affecting device and circuit performance. Thus, exploring the electrical characteristics and low-frequency noise ...

Infineon has introduced a half-bridge, 650 V rated, SOI-based EiceDRIVER. The 2ED2304S06F supports typical source and sink currents of 360 mA and 700 mA, respectively, with 310 ns and 300 ns ...

There is compressive SiGe for p-FETs and tensile Si for n-FETs. “In addition to clearing the path to improved performance in FD-SOI technology, they preserve its excellent electrostatic integrity and ...

Floating-body effects (FBEs) are a main concern in partially depleted (PD) SOI MOSFETs, resulting in the deterioration of electrical characteristics. In addition, the FBEs will reduce the SEU ...