Gigahertz field-effect transistors (FETs) have been the imperative need for the development of nanoelectronics based on atomically thin transition metal dichalcogenides (TMDs). Yet, WS2 FETs working ...

Avalanche transistors have been widely used in nanosecond pulse generators because of high switching speed, low jitter, small size, low intrinsic inductance, and high-frequency operation. Marx ...

We report experimental results on the dc and ac characterization of multiterminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlO x), and a ferromagnetic material ...