An effect of adopting field plate (FP) technique in Gallium Nitride (GaN) high electron mobility transistor (HEMT) design is shown. The results of two-dimensional physical simulation of GaN HEMT with ...

We report planar liquid crystal-gated-organic field-effect transistors (LC-g-OFETs) with a simple in-plane drain–source–gate electrode structure, which can be cost-effectively prepared by typical ...

An analytical model is proposed in this paper for the surface electric field around the drain-side gate edge in the AlGaN/GaN HEMT to which the gate leakage, current collapse, and so on are highly ...