For this, we have observed the effects of different ITCs on both conventional dual material control gate tunnel field effect transistor (DMCG-TFET) and dual-material gate-oxidestack double-gate TFET ...

This paper presents the first demonstration of ultra-thin BOX FD SOI devices with nominal gate length of 30 nm. The characteristics of FD SOI MOSFETs are investigated in detail as T/sub BOX/ is varied ...