N thin films with record-high scandium levels, with exciting potential for ultra-low-power memory devices, as reported by ...

Materials like silicon carbide and gallium nitride are pushing the limits of conventional test methods, requiring innovative solutions to ensure reliability and efficiency in the test process.

X-ray diffraction (XRD) was used to determine the crystal structure of the nitride films prepared at various deposition and annealing temperatures. Time-dependent XRD data was obtained to analyze the ...

High-temperature ALD oxides on silicon-based large electrodes have been used for stimulation (Schoen and Fromherz, 2007). Conversely, ALD thin film titanium nitride (TiN) electrodes have been reported ...

Kyocera develops silicon nitride light source for high-performance FTIR spectrometry Offers higher spectral emissivity, stable performance over 150,000 cycles.

Silicon nitride (Si3N4) in recent years has gained significant attention because of its advantageous properties and is being incorporated into quantum computer architecture. Specifically, for quantum ...

This article discusses quantifying hydrogen content in silicon nitride dielectric films on silicon wafers.