In this paper, we discuss and demonstrate the potential of normally-on GaN high-electron-mobility transistors (HEMTs) as opening switches in miniaturized pulsed-power circuits. The high-breakdown ...

A new, frequency-domain, behavioral modeling methodology for radio frequency (RF) power transistors, based on canonical section-wise piecewise linear (CSWPL) functions, is presented in this article.

In today’s information age, high performance nonvolatile memory devices have become extremely important. Despite their potential, existing devices suffer from limitations, such as low operation speed, ...