In today’s information age, high performance nonvolatile memory devices have become extremely important. Despite their potential, existing devices suffer from limitations, such as low operation speed, ...

In this paper, we discuss and demonstrate the potential of normally-on GaN high-electron-mobility transistors (HEMTs) as opening switches in miniaturized pulsed-power circuits. The high-breakdown ...

As transistor gate lengths are scaled towards the 10-nm range, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot ...