As transistor gate lengths are scaled towards the 10-nm range, thermal device design is becoming an important part of microprocessor engineering. Decreasing dimensions lead to nanometer-scale hot ...

At the very least, the transistor could revolutionize communications and radio signals, something that would give the US Army an advantage if the invention was kept a secret from other countries.

The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric ...

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) ...

Research hub Imec has achieved what it claims is a record-breaking achievement in RF gallium nitride on silicon (GaN-on-Si) transistor performance that could be a boon for next-generation 6G ...

A comprehensive structural and electrical characterization of solution-processed blend films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) semiconductor and poly(α-methylstyrene) ...