In this paper, a comparison of gate-all-around nanowire-FETs, nanoplate (NP)-FETs, and FinFETs was undertaken for the same areas of not only the gate metal but also the silicon channel, assuming the ...

This work presents the use of ultimately thin (15 nm) L-shaped spacers to open the process window for deposition-related steps. Whereas conventional spacers prevent the correct active area ...

Quasi-2D halide perovskites, especially the Ruddlesden–Popper perovskites (RPPs), have attracted great attention because of their promising properties for optoelectronics; however, there are still ...

From this perspective, a highly effective fabrication engineering approach has been employed to demonstrate 40 nm short-channel vertical synapse thin film transistors (VS-TFTs) that utilize HfO 2 ...