Abstract: The SiC/SiO 2 interface state is one of the main factors that limit the performance and reliability of the SiC metal–oxide–semiconductor field-effect transistor (MOSFET). In this article, we ...

In this article, a novel SiC trench MOSFET with integrated Schottky super barrier rectifier (SSBR-TMOS) is proposed and studied by TCAD simulations. The SSBR is introduced as a replacement of the body ...