Researchers have developed a new theory that explains why tunnel magnetoresistance (TMR)—used in magnetic memory and other ...

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This letter proposes that dominant mechanism that induces the change of traps and defects in AlGaN barrier layer varies with different range of voltage stress on the gate of AlGaN/GaN high electron ...

A novel mechanism is proposed for transistors that exploits the negative differential capacitance of piezoelectric gate barriers. Electric field induced electrostriction modulates the thickness of a ...