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Gate drivers protect IGBTs and SiC MOSFETS to 9.6 kV
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest ...
Business Wire3d
Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters
Toshiba's new bare die 1200V SiC MOSFET for automotive traction inverters with a new structure delivers both low ...