Here we present a complete analytical model that characterizes all the variations of multi-gate MOSFETs including the Tri-gate FinFET (Figure 1), all-around gate FinFET, Trapezoidal FinFET, ...

The present paper deals with the modeling of the capacitance of a MOSFET operated in all regions, i.e., subthreshold linear and saturation. The model is based on the electric charges behavior under a ...