Here we present a complete analytical model that characterizes all the variations of multi-gate MOSFETs including the Tri-gate FinFET (Figure 1), all-around gate FinFET, Trapezoidal FinFET, ...

Reflections from a recent panel discussion at DAC, The Chips to Systems Conference held at Moscone West on the CHIPS Act's impact on the design ecosystem ...

This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the ...

With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...