Pulsed RF measurement is necessary to characterize APDs because of limited heat dissipation power of the chip. Using cw optical signal the measurement is restricted within 0.1 mW of optical power.

Broad-arealasers with a $100 \\ \\mu \\mathrm{m}$ aperture based on heterostructures with double asymmetry and active regions at wavelengths of 850 nm using bulk 45 nm GaAs and at 970 nm using quantum ...