In this paper, we present the detailed fabrication process, high-frequency characterization, and modeling of through-wafer copper-filled vias ranging from 50- to 70-/spl mu/m-in diameter on 400-/spl ...

In this paper, we investigate sputtered physical vapor deposition (PVD) AlN nucleation layer effects on crystal quality and efficiency of GaN-based light-emitting diodes (LEDs) prepared on high-aspect ...