In this letter, an ultrafast and universal short-circuit protection (SCP) method is proposed for silicon carbide metal–oxide–semiconductor field-effect transistors based on gate current detection.

In this paper, with the help of calibrated 2-D simulations, we report a detailed study on the effect of drain induced barrier enhancement on the subthreshold swing and OFF-state current of a short ...

A power-module architecture developed by Ashai Kasei and Silicon Austria Labs features Hall-effect sensors, delivering higher ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

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