Bipolar degradation constitutes a significant long-term reliability concern that can affect the durability of Silicon Carbide (SiC) devices. In this study, the application of a large constant current ...

In this letter, an ultrafast and universal short-circuit protection (SCP) method is proposed for silicon carbide metal–oxide–semiconductor field-effect transistors based on gate current detection.

A power-module architecture developed by Ashai Kasei and Silicon Austria Labs features Hall-effect sensors, delivering higher ...

ROHM's 4th generation silicon carbide (SiC) metal-oxide-semiconductor field-effect Transistor (MOSFET) bare chip has been adopted for mass production in Toyota.

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

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