El Segundo, CA — International Rectifier, (IR) a global provider of power management technology, introduced the IRF6665 DirectFET MOSFET for medium power Class D audio amplifiers. The device ...

Mitsubishi Electric Corporation announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor embedded with a Schottky barrier diode ...

When looking to the structure of most any MOSFET with leads, whether SOIC, DPAK, TO-220, etc., you will see some basic similarities between them.

Wolfspeed C3M900V SiC MOSFET Structure and Cost Analysis Report - Research and Markets June 27, 2017 01:32 PM Eastern Daylight Time. DUBLIN-- (BUSINESS ...

Figure 2: Superjunction MOSFET Structure. Figure 3: Blocking Voltage and On-resistance Comparison for Planar and Superjunction MOSFETs. Figure 2 shows the physical structure of superjunction MOSFETs ...

Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. B. Jayant Baliga, Founder, Silicon ...

Research and Markets has announced the addition of the "MiscellaneousIGBT vs SiC MOSFET comparison: Structure and Cost Analysis" report to their offering. The report provides an in-depth analysis ...

Mitsubishi Electric Develops Trench-type SiC-MOSFET with Unique Electric-field-limiting Structure Will contribute to smaller and more energy-efficient power electronic equipment September 29, 2019 ...

This MOSFET product is being used by a global automaker. The new 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle's directional control through an electric motor.

The 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle’s directional control through an electric motor. ... It incorporates a rugged trench MOSFET structure in a thick gate ...