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IEEE1d
A 54–68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS - IEEE Xplore
This brief presents a 54–68 GHz two-stage power amplifier (PA) with linearity and efficiency enhancement in a 40 nm CMOS process. The first stage adopts a current reuse cascaded common-source (CS) ...
IEEE1d
A K-band power amplifier in a 0.15-um GaAs pHEMT process
A K-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) is designed using a 0.15 um Emode GaAs pHEMT process. The MMIC PA is designed with power combining technology. Simulation ...