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IEEE21h
An Area and Energy Efficient Ultra-Low Voltage Level Shifter With Pass Transistor and Reduced-Swing Output Buffer in 65-nm CMOS - IEEE Xplore
This brief presents an ultra-low voltage level shifter (LS) with fast and energy-efficient voltage conversion from the deep subthreshold region to the superthreshold region. The proposed LS achieves ...
IEEE2d
Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors
In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are ...
C&EN5d
Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels - ACS Publications
With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...
C&EN6d
Crystalline Organic Pigment-Based Field-Effect Transistors
Three conjugated pigment molecules with fused hydrogen bonds, 3,7-diphenylpyrrolo [2,3- f]indole-2,6 (1 H,5 H)-dione (BDP), (E)-6,6′-dibromo- [3,3′-biindolinylidene]-2,2′-dione (IIDG), and 3,6-di ...