On-wafer transmission line pulsing (TLP) measurements and transient interferometric mapping experiments on vertically integrated DMOS transistors reveal the presence of hot filament hopping between ...

Sponsored by Texas Instruments: A new family of GaN power stages plus an advanced eFuse current-limit approach helps designers achieve safe, high power for modern data centers. As high-performance ...

This will make Polar the only foundry in the US capable of high voltage power BCD bipolar-CMOS-DMOS wafer production. “Tower is very pleased to expand onshore access of its technologies in support of ...

Weebit Nano Ltd. is a leading developer and licensor of advanced semiconductor memory technology. The company’s ground-breaking Resistive RAM (ReRAM) addresses the growing need for significantly ...

Onsemi has installed a 65nm BCD (bipolar CMOS DMOS) process at its fab in East Fishkill, New York, on a line that can handle 300mm wafers. Called ‘Treo Platform ...

BCD (Bipolar CMOS DMOS) The typical BCD technology offers low voltage logic CMOS transistors, high voltage transistors, diodes, resistors, and MIM capacitors in the same process. The BCD process has ...

DMOS stands out with its comprehensive cloud operating system design, decentralized ecosystem, support for non-containerized applications, and simplified user experience. Unlike Kubernetes (k8s ...

The wider adoption of power GaN devices at voltages above 650 V necessitates innovations in both the substrate and integration process of the lateral high-electron-mobility transistor (HEMT) and ...

In the new study, the researchers built a transistor with two "phosphorus-doped diamond epilayers." Phosphorus doping, which simply means adding the element to the layers, is necessary to add ...