The double-gate SOI structure is believed to be the most scalable technology down to the 0.02/spl mu/m regime. However, experimental study of double-gate related phenomena has been hindered by the ...

In this study, the characteristics of a double-channel AlGaN/GaN HEMT are improved. Firstly, depletion mode is changed to enhancement mode by changing the thickness of an AlGaN layer, implementing a p ...