A double-sided 1200-V/600-A multichip half-bridge insulated gate bipolar transistor (IGBT) module was fabricated utilizing molybdenum as stress-relief buffer and sintered nanosilver as die-attachment.

This paper presents the design, construction, and testing of a low-noise high-force double-sided linear iron-core motor for high-precision and high-throughput system applications such as in ...