Chemists at the School of Science of the Hong Kong University of Science and Technology (HKUST) have recently made ...

This work presents the first room temperature operation of GaAs based ridge waveguide semiconductor lasers containing lithographically defined InGaAs quantum dots as the active region. Semiconductor ...

New works presents a unified theoretical framework to describe the electronic structure of non-Hermitian systems, potentially leading to major advancements in condensed matter physics ...

Results of numerical simulation of a miniaturized sub-THz traveling-wave tube amplifier with sheet electron beam and planar grating slow wave structure (SWS) are presented. Cold characteristics of the ...

Recent research has pushed the efficiency of colloidal quantum dot solar cells toward a level that spurs commercial interest. Quantum dot/metal oxide bilayers form the most efficient colloidal quantum ...

Precisely measuring the exact time that an electron spends inside a quantum tunneling barrier during strong-field ionization has so far proved challenging. In recent years, physicists have ...

The turn-on of the electron field emission (EFE) process occurs at (E0) NCD = 24.1 V/μm and (E0) UNCD = 18.6 V/μm for the pristine NCD and UNCD materials, respectively. The granular structure of the ...