We have integrated a fast recovery diode in the structure of a power bipolar transistor. This integral diode is physically connected between the emitter and the collector of the transistor and can be ...

Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and ...

The National Agency for the Prohibition of Trafficking in Persons on Monday said it has tightened the net around Nigerian entertainer, Darlington Okoye (a.k.a. Speed Darlington), adding his name to an ...

Speed Darlington has reacted after he was declared wanted by NAPTIP for cyberbullying and stalking. He shared the amount they ...

Researchers at Northeastern University have discovered how to change the electronic state of matter on demand, a breakthrough ...