Memory arrays such as SRAM cells are responsible to the high-power consumption of modern digital systems. This investigation proposed an SRAM utilizing an ultra-low power cell, implemented using the ...

Hardware Industry intel manufacturing Intel 18A node reportedly stuck at 10% yields, SRAM density also trails TSMC upcoming 2nm tech The 18A process is slated for major Intel products in 2025 By ...

FinFETs redefined chip design when they came onto the scene more than a decade ago. While these nonplanar transistors are still the unofficial industry standard, they may be nearing the end of their ...

One of the key issues with the nanosheet transition is that SRAM will not scale or hardly scale in terms of density compared to the FinFET.

NXP Semiconductors and TSMC have jointly announced their collaboration to deliver the industry's first automotive embedded MRAM in 16 nm FinFET technology.

Learn about the latest trends and innovations in VLSI design for DRAM and SRAM, two types of memory devices that enable high-performance and low-power computing systems.

FIGURE 3. Layout of inverter cells for (A) bulk and (B) FinFET. TABLE 1. Updated transistor model of bulk (130–22 nm) and FinFET (14–7 nm) technologies. FIGURE 4. Scaling trend of SRAM cell area with ...

The most advanced TSMC node in production today, the N5 family, is FinFET technology. N12e is a significantly enhanced technology derived from TSMC’s 16nm FinFET technology first introduced in 2013.

Figure 2 – Layout of SRAM half cells for a) FinFET, b) gate-all-around nanosheet and c) forksheet. The forksheet can provide up to 30% scaling of the bit cell height as the p-n space is not governed ...

In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and process ...