Imec is a world-leading research and innovation center in nanoelectronics and digital technologies. Imec has more than 6.000 employees and top researchers, ...

For the first time, we propose a novel bottom spacer fin-shaped field-effect-transistor (FinFET) structure for logic applications suitable for system-on-chip (SoC) requirements. The proposed device ...

FinFET technology, which stands for Fin Field-Effect Transistor, is a type of 3D transistor used in modern semiconductor fabrication. Unlike traditional flat transistors, the FinFET has a raised, ...

FinFETs redefined chip design when they came onto the scene more than a decade ago. While these nonplanar transistors are still the unofficial industry standard, they may be nearing the end of their ...

The structure of the Si-based transistors would be changed from the fin field-effect transistor (FinFET) to the cutting-edge Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs) at 3 nm node.

FinFETs form the foundation for many of today’s semiconductor fabrication techniques but also create significant design concerns that affect your layout. Understanding the changes and design ...

To set the stage for the nanosheet, what was the argument in favor of the FinFET in the first place? The nanosheet transistor is really a continuation of the FinFET.

Superior scalability and better gate-to-channel capacitive coupling can be achieved with adopting gate-all-around (GAA) device architecture. However, compared against FinFET device structure, the GAA ...