Researchers at the University of California, Riverside, have uncovered how to manipulate electrical flow through crystalline ...

For those working in the field of gallium nitride (GaN) power transistors and amplifiers, this article's subtitle ("A Perspective on Transistor Modeling for GaN High-Power Amplifier Design") is ...

Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and ...

Is high-voltage DC (HVDC) the future of power distribution in data centers? If so, power-supply designers will have to work through a lot of challenges to make it a reality.

Staff members check a power distribution room at the Barkol converter station of the Hami-Chongqing ±800 kV ultra-high voltage direct current transmission project, in Hami, northwest China's ...

The Trump administration’s proposed cornerstone rule to repeal power plant air pollution controls will have to survive a sea of legal challenges bolstered by recent precedent against agency deference, ...

Imec now demonstrates a GaN-on-Si E-mode MOSHEMT that reaches a record 27.8dBm (1W/mm). output power and 66% power-added efficiency (PAE) at 13GHz and 5V. The result was obtained in a single device ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...