Technology computer-aided design (TCAD) simulations are used to clarify the underlying mechanisms affecting single-event upset (SEU) results at 7-, 5-, and 3-nm bulk FinFET technologies using ...

Samsung Electronics is recalibrating its semiconductor foundry roadmap, putting the spotlight squarely on refining its 2 nm ...

Static Random Access Memory (SRAM) is a critical component in modern micro-architectures, playing a pivotal role in Application-Specific Integrated Circuits (ASICs) and Systems on Chip (SoCs). This ...