Practical design of double-gate undoped-channel FinFET has been investigated through 3D device simulations considering gate-induced drain leakage (GIDL). Optimization of FinFET structure was carried ...

Technology computer-aided design (TCAD) simulations are used to clarify the underlying mechanisms affecting single-event upset (SEU) results at 7-, 5-, and 3-nm bulk FinFET technologies using ...