News

Electronics3603d
Rohm targets AI data center power demands with 100 V hot-swap MOSFET
Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...
TMCnet4d
ROHM Introduces New MOSFET for AI Servers with Industry-leading SOA Performance and Low ON-resistance
The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...
Power Electronics World4d
Rohm adds new MOSFET for AI servers
Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...
IEEE2d
First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer - IEEE Xplore
In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...
IEEE1d
Modeling Method of Local Mismatch Model for MOS Transistors
In this paper, a MOS SPICE local mismatch model is presented, in which the temperature effect coefficient is added in the existing SPICE local mismatch model equation. The effect of temperature ...
C&EN4d
Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels - ACS Publications
With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...