News

IEEE1d
Modeling Method of Local Mismatch Model for MOS Transistors
In this paper, a MOS SPICE local mismatch model is presented, in which the temperature effect coefficient is added in the existing SPICE local mismatch model equation. The effect of temperature ...
IEEE2d
First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer - IEEE Xplore
In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...
Electronics3602d
Rohm targets AI data center power demands with 100 V hot-swap MOSFET
Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...
Power Electronics World3d
Rohm adds new MOSFET for AI servers
Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...
C&EN4d
Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels - ACS Publications
With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...
TMCnet4d
ROHM Introduces New MOSFET for AI Servers with Industry-leading SOA Performance and Low ON-resistance
The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...