Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Integrating the Schottky diode into a GaN transistor helps boost power-system efficiency by reducing dead-time losses.

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our ...

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Mass production shipments of the power module have commenced from HAIMOSIC (SHANGHAI), a joint venture between ROHM and Zhenghai Group. ROHM is not only focusing on the current 4t ...

The condition monitoring problem of power devices is significant for diagnostics and prognostics of a switched-mode power supply (SMPS) system. For power mosfet, the gate oxide degradation often ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

Strain engineering such as tensile-strained silicon on silicon germanium is widely used in complementary metal-oxide-semiconductor (MOS) devices to enhance carrier mobility and can potentially reduce ...

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