Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Integrating the Schottky diode into a GaN transistor helps boost power-system efficiency by reducing dead-time losses.

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our ...

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The condition monitoring problem of power devices is significant for diagnostics and prognostics of a switched-mode power supply (SMPS) system. For power mosfet, the gate oxide degradation often ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

Strain engineering such as tensile-strained silicon on silicon germanium is widely used in complementary metal-oxide-semiconductor (MOS) devices to enhance carrier mobility and can potentially reduce ...

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