Renesas launches the Gen IV Plus platform with three new high-voltage 650-V GaN FETs for AI data centers and server power ...

In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...

Designed for hot-swap circuits, the advanced power MOSFET delivers wide SOA and ultra-low ON-resistance—optimizing performance in AI servers, battery-powered equipment, and industrial power systems.

Renesas recently launched three new 650V GaN FETs—TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—based on Transphorm’s SuperGaN depletion-mode (d-mode) architecture.

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.

EPC Space has introduced the EPC7030MSH, a 300 V radiation-hardened (RH) gallium nitride (GaN) field-effect transistor (FET) that sets a new benchmark for performance in high-voltage, high-power space ...

Last, the avalanche withstand time of the fabricated SiC p-MOSFET is experimentally demonstrated to be 27% higher than that of the n-channel one. It is concluded that the SiC p-MOSFET could be a ...

Alpha and Omega Semiconductor Introduces 25V MOSFET in DFN3.3x3.3 Source-Down Packaging that Meets Power Demands in AI Servers ...