Intel announced the most dramatic change to the architecture of the transistor since the device was invented. The company will henceforth build its transistors in three dimensions, a shift that-if all ...

In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are ...

With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...