In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are ...

Intel announced the most dramatic change to the architecture of the transistor since the device was invented. The company will henceforth build its transistors in three dimensions, a shift that-if all ...

With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...