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IEEE1d
A 5-V-Program 1-V-Sense Anti-Fuse Technology Featuring On-Demand Sense and Integrated Power Delivery in a 22-nm Ultra Low Power FinFET Process - IEEE Xplore
A 11.56-kbit one-time programmable secure array featuring Intel’s first high-volume manufacturing (HVM) ready anti-fuse memory using the 22FFL process technology is reported. First, design and process ...
IEEE3d
Device and technology evolution for Si-based RF integrated circuits
The relationships between device feature size and device performance figures of merit (FoMs) are more complex for radio frequency (RF) applications than for digital applications. Using the devices in ...