Titanium and its alloys have been commonly used as implant materials. However, the inherent bioinert nature hinders its good osseointegration which limits its permanent clinical applications. In this ...

Ion implantation technique can be applied for planar isolation of AlGaN/GaN heterojunction field-effect transistors (HFETs), which enables high-density integration of the power switching transistors.

Abstract and Introduction Abstract Introduction: Shoulder pain and disability ipsilateral to the implant site is a common complication of cardiac rhythm device implantation, yet very little has ...

We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the diodes show an ...

Twelve percent of the entire cohort had moderate or greater TR at 1 year after transcatheter aortic valve implantation, suggesting that TR does not reliably respond to correction of aortic stenosis; ...